Samsung starts cranking out 512GB eUFS storage

Samsung starts cranking out 512GB eUFS storage

Samsung starts cranking out 512GB eUFS storage

The new flash storage (eUFS) will feature Samsung's 512-gigabit V-NAND chip and will overcome current limitations posed by the use of MicroSD cards.

They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations.

Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics says the following about company's vision in paving the way for mobile phones to exhibit higher levels of internal storage. To account for the growing storage needs in mobile, Samsung has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next generation smartphones and tablets.

According to Samsung, the 512GB eUFS package enables a flagship smartphone to store approximately 130 4K (3840×2160) videos of 10-minute duration.

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The 512GB memory chip is made of eight 64-layer 512Gb V-NAND chips that are joined by a controller chip.

As the saying goes, you can never have too much storage space on your phone. However, that barrier has now been broken as Samsung today has officially announced its new 512GB embedded UFS solution.

Samsung says that it has introduced a new set of proprietary technologies to maximize performance and energy efficiency. Also, the 512GB eUFS' controller chip is said to "speed up the mapping process for converting logical block addresses to those of physical blocks".

For random operations, the new eUFS can read 42,000 IOPS and write 40,000 IOPS.

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Sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively. With 512GB of onboard storage, it would, for most people, eliminate the need for supplementary storage options, such as microSD cards.

On a related note, Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production.

Our take: 512GB of UFS storage seems like a dream, but the question is: will OEMs release devices with such an incredibly high amount of internal storage?

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